Rambus releases 2nd Gen DDR5 RCDs
Registering Clock Drivers and Data Buffers go to 5600
Today Rambus is announcing their second generation DDR5 RCD chip running at up to 5600MT/s.
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Today Rambus is announcing their second generation DDR5 RCD chip running at up to 5600MT/s.
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In a briefing at ISSCC Sony announced the creation of the first three-layer stacked image sensor.
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It looks like Hynix is the first to show off LPDDR4x modules and 8GB phone memory stacks.
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Code name alert, this time for a new way of doing main memory on PCs and related things.
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You may remember Rambus from their lightbulbs, cameras, and crypto programs, but did you know that they also do DRAM technology?
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It is quite rare to go to a memory company at a trade show and see more interesting things than you can fit in to an article but Innodisk did just that at Computex.
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Semiaccurate has learned that Intel intends to do away with DIMMs, DRAM, and any other sort of user addable memory.
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There is a distinct possibility that Toshiba (TYO:6502) could take over the struggling DRAM manufacturer Elpida…
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Elpida Memory Inc. (TYO:6665) has managed to pull another first by being the first company to finish the development of a 25nm 4Gbit synchronous DRAM supporting the DDR3 standard, the company said in a press release.
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The razor sharp margins in the commodity DRAM business have now caused ProMOS (TPO:5387) to completely exit its business for PC DRAM and in the future focus solely on specialty DRAM and LCD drivers according to chairman ML Chen.
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Samsung manages to rewrite resistive memory 1 trillion times and IMEC invents new filament to allow aggressive scaling.
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Toshiba Corporation (TYO:6502) and Hynix Semiconductor Inc. (SEO:000660) have agreed to pool their efforts in the development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM) according to a joint press release.
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Adesto Technologies Corp. of Sunnyvale in California is sampling a completely new type of RAM called CBRASM.
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We have already received the first indications that tablet sales are not as strong as expected.
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China has developed and manufactured its first phase change memory that has a capacity of 8 Mb according to a report by the official Chinese news agency Xinhua.
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